Small Signal MOSFETs | NTR4170N

Single N−Channel Power MOSFET 30V, 3.1A, 55mΩ

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Overview

This is a 30 V N-Channel Power MOSFET.

  • Power Converters for Portables
  • Battery Management
  • Load/Power Switch

  • Low rDS(on) to Minimize Conduction Loss
  • Low Gate Charge
  • Low Threshold Levels

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MSL Type

MSL Temp (°C)

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Package Name

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Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTR4170NT1G

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CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

NA

0

30

55

12

1.4

3.2

1.25

110

70

2.4

4.76

432

1.4

2.9

53.6

37.1

$0.0935

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Reliability Data

Die Related Summary Data

Device: NTR4170NT1G

Equivalent to wafer fab process: TRENCH FET LEGACY

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TRENCH FET LEGACY

2

15086608915

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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