Small Signal MOSFETs | NTMD4820N

Dual N-Channel Power MOSFET 30V, 8.0A, 20mΩ

Obsolete

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Overview

Power MOSFET 30 V, 8 A, Dual N-Channel, SOIC-8

  • Disk Drives
  • DC-DC Converters
  • Printers

  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • Dual SOIC-8 Surface Mount Package Saves Board Space

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTMD4820NR2G

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

SOIC-8

751-07

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

NA

0

30

Q1=Q2=20

20

3

8

1.28

-

Q1=Q2=27

-

7.7

940

3.2

8

225

125

Price N/A

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Reliability Data

Die Related Summary Data

Device: NTMD4820NR2G

Equivalent to wafer fab process: TRENCH FET LEGACY

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TRENCH FET LEGACY

2

15086608915

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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