Small Signal MOSFETs | NTJS4151P

Single P−Channel Trench Power MOSFET -20V -4.2A 60mΩ

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Overview

Trench Power MOSFET -20 V, -4.2 A, Single P-Channel, SC-88

  • High Side Load Switch

  • Cell Phones
  • Computing
  • Digital Cameras
  • MP3s
  • PDAs

  • Leading Trench Technology for Low RDS(on) Extending Battery Life
  • SC-88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, same as SC-70-6
  • Gate Diodes for ESD Protetion

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTJS4151PT1G

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

NA

0

-20

-

12

1.2

3.3

1

70

47

-

10

850

2.8

0.23

160

110

$0.0889

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Reliability Data

Die Related Summary Data

Device: NTJS4151PT1G

Equivalent to wafer fab process: TRENCH FET LEGACY

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TRENCH FET LEGACY

2

15086608915

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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