Small Signal MOSFETs | NTJD4105C

Complementary Small Signal MOSFET

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Overview

This complementary dual device was designed with a small package (2 x 2 mm) and low RDS(on) MOSFETs for minimum footprint and increased circuit efficiency. The low RDS(on) performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.

  • DC-DC Conversion
  • Load/Power Switching
  • Single or Dual Cell Li-Ion Battery Supplied Devices

  • Cell Phones
  • MP3s
  • Digital Cameras
  • PDAs

  • Complementary N and P Channel Device
  • Leading -8.0 V Trench for Low RDS(on) Performance
  • ESD Protected Gate-ESD Rating: Class 1
  • SC-88 Package for Small Footprint (2x2mm)

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Product services, tools and other useful resources related to NTJD4105C

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Reliability Data

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTJD4105CT1G

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

Y

Complementary

PowerTrench® T1

SC-6

Small Signal

Logic

0

NA

0

-

-

12

1.5

0.63

0.27

N:445.0 , P:460.0

N: 375.0, P: 300

0.9

1.3

N(20V):33, P(-8V): 160

0.4

-

13

2.8

$0.0581

More Details

NTJD4105CT2G

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

Y

Complementary

PowerTrench® T1

SC-6

Small Signal

Logic

0

NA

0

-

-

12

1.5

0.63

0.27

N:445.0 , P:460.0

N: 375.0, P: 300

0.9

1.3

N(20V):33, P(-8V): 160

0.4

-

13

2.8

$0.0581

More Details

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Reliability Data

Die Related Summary Data

Device: NTJD4105CT2G

Equivalent to wafer fab process: TRENCH FET LEGACY

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TRENCH FET LEGACY

2

15086608915

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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