Small Signal MOSFETs | NTHD2110T

Power MOSFET -12V P-Channel with Integrated TVS

Obsolete

Datasheet

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Overview

Power MOSFET -12V P-Ch with Integrated 12V TVS

  • Leading Edge Trench Technology for Low RDS(on)
  • Integrated TVS 15KV Contact Discharge ESD Protection
  • Two Devices in One 3.0x1.8mm ChipFET Package
  • 1.8V Gate Rating

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTHD2110TT1G

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Obsolete

CAD Model

Pb

A

H

P

ChipFET-8

1206A-03

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

NA

Small Signal

Standard

0

NA

0

12

-

8

-

4.7

1.1

NA

-

-

-

NA

-

-

-

-

Price N/A

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