Power MOSFET, -20V -2.5A P-Ch with Schottky Barrier Diode, TSOP-6

Obsolete

Overview

-20 V, -2.5 A, P-Channel with Schottky Barrier Diode, TSOP-6

  • DC-DC Converters

  • Fast Switching
  • Low Gate Change
  • Low RDS(on)
  • Low VF Schottky Diode
  • Independently Connected Devices

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTGD3147FT1G

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Obsolete

CAD Model

Pb

A

H

P

TSOP-6

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

NA

Small Signal

Standard

0

NA

0

20

-

12

-

2.5

1

NA

-

-

-

NA

-

-

-

-

Price N/A

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