Small Signal MOSFETs | NDS9952A

Dual N & P-Channel Enhancement Mode Field Effect Transistor 30V

Obsolete

Datasheet

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Overview

These dual N- and P-channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

  • This product is general usage and suitable for many different applications.

  • N-Channel: 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V,
    P-Channel: -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V.
  • High density cell design for extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package.
  • Dual (N & P-Channel) MOSFET in surface mount package.

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CAD Model

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDS9952A

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

Complementary

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

NA

0

±30

N:80,P:130

20

±2.8

N: 3.7, P: -2.9

1.6

NA

-

-

10

NA

-

-

-

-

Price N/A

More Details

NDS9952A-F011

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

4000

N

Complementary

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

NA

0

±30

N:80,P:130

20

±2.8

N: 3.7, P: -2.9

1.6

NA

-

-

10

NA

-

-

-

-

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: NDS9952A

Equivalent to wafer fab process: TP

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TP

8

738717284

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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