Small Signal MOSFETs | NDS356AP

-30V P-Channel Logic Level Enhancement Mode Field Effect Transistor

Obsolete

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Overview

SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using onsemi's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

  • This product is general usage and suitable for many different applications

  • -1.1 A, -30 V
    rDS(ON) = 0.3 Ω @ VGS = -4.5 V
    rDS(ON) = 0.2 Ω @ VGS = -10 V
  • Industry Standard Outline SOT-23 Surface Mount Package Using Proprietary SuperSOT™-3 Design for Superior Thermal and Electrical Capabilities.
  • High Density Cell Design for Extremely Low rDS(ON)
  • Exceptional On-Resistance and Maximum DC Current Capability

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Reliability Data

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDS356AP

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Obsolete

CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23-3

Small Signal

Logic

0

NA

0

-30

200

20

-3

-1.1

0.5

-

300

-

3.4

280

-

-

-

-

Price N/A

More Details

NDS356AP-NB8L005A

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Obsolete

CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

NA

0

-30

200

20

-3

-1.1

0.5

-

300

-

3.4

280

-

-

-

-

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: NDS356AP

Equivalent to wafer fab process: TP

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TP

8

738717284

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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