Dual N & P Channel Enhancement Mode Field Effect Transistor 60V

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Overview

These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply applications.

  • This product is general usage and suitable for many different applications.

  • Q1:
    0.51 A, 60 V
    RDS(ON) = 2 Ω @ VGS = 10 V
    RDS(ON) = 4 Ω @ VGS = 4.5 V
  • Q2:
    -0.34 A, 60 V
    RDS(ON) = 5 Ω @ VGS = -10 V
    RDS(ON) = 7.5 Ω @ VGS = -4.5 V
  • High saturation current
  • High density cell design for low RDS(ON).
  • Proprietary SuperSOT™-6 package design using copper lead frame for superior thermal and electrical capabilities

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDC7001C

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CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

N

Complementary

PowerTrench® T1

SC-6

Small Signal

Logic

0

NA

0

±60

N: 2000, P: 5000

±20

2.5

-0.34

0.096

-

N: 4000, P: 7500

-

1.6

20

N: 0.4, P: 0.3

N: 16, P: 11

N: 11, P: 13

N: 16, P: 11

$0.1383

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