Small Signal MOSFETs | HUFA75307T3ST

N-Channel UltraFET Power MOSFET 55V, 2.6A, 90mΩ

Obsolete

Datasheet

Products

Similar Products

Overview

This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drives, relay drives, low-voltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75307.

  • Body Electronics
  • Comfort and Convenience
  • Infotainment
  • Portable Navigation
  • Power Train
  • Safety and Control
  • Vehicle Security Systems
  • Other Automotive
  • Other

  • 2.6A, 55V
  • Ultra On-Resistance, rDS(ON) = 0.090Ω
  • Diode Exhibits Both High Speed and Soft Recovery
  • Temperature Compensated PSPICE® Model
  • Thermal Impedance SPICE Model
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Related Literature
     - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

Tools and Resources

Product services, tools and other useful resources related to HUFA75307T3ST

CAD Model

CAD Model

Material Composition

Product Change Notification

Reliability Data

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Sort by

Product Groups:

┗

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

HUFA75307T3ST

Loading...

Obsolete

Similar Products
CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

N

N-Channel

PowerTrench® T1

SOT-223-4

Small Signal

Standard

0

Single

0

55

90

±20

4

2.6

1.1

-

-

-

8.3

250

4

50

115

30

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.

Reliability Data

Die Related Summary Data

Device: HUFA75307T3ST

Equivalent to wafer fab process: U2

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

U2

0

3282858009

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

New Search