N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ

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Overview

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

  • AC-DC Merchant Power Supply - Servers & Workstations
  • Workstation
  • Server & Mainframe

  • 75A, 55V
  • Temperature Compensated PSPICE® and SABER™ Models
  • Thermal Impedance SPICE and SABER Models
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Related Literature
  • TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

HUF75345G3

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Active

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

Y

N-Channel

PowerTrench® T1

TO-247

Small Signal

Standard

0

Single

0

55

7

±20

4

75

325

-

-

-

125

4000

58

80

1450

450

$2.1145

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