Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 2.8 A, 110 mΩ, SOT-223

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Overview

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

  • LED TV
  • Consumer Appliances
  • Other Industrial
  • 2.8A, 60V, RDS(on) = 110mΩ(Max.) @VGS = 10 V, ID = 1.4A
  • Low gate charge ( Typ. 4.8nC)
  • Low Crss ( Typ. 17pF)
  • 100% avalanche tested

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQT13N06LTF

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Last Shipments

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

1

260

REEL

4000

N

N-Channel

PowerTrench® T1

SOT-223-4

Small Signal

Logic

0

Single

0

60

110

±20

2.5

2.8

2.1

-

140

-

4.8

270

2.7

45

95

17

Price N/A

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