Dual N & P Channel, Logic Level MOSFET

Obsolete

Overview

These dual N and P-channel enhancement mode power field effect transistors are produced using onsemi's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and communication mode. This device is well suited for high interface in telephone sets.

  • High Interface

  • Telephone Sets

  • N-Channel
    1.3 A, 60 V
    RDS(ON) = 0.55 Ω @ VGS = 10 V
    RDS(ON) = 0.65 Ω @ VGS = 5 V
  • P-Channel
    -0.3 A, -300 V
    RDS(ON) = 15.5 Ω @ VGS = -10 V
    RDS(ON) = 16 Ω @ VGS = -5 V
  • Low Gate Charge (Typ. N-Channel 1.6 nC)
             (Typ. P-Channel 3.6 nC)
  • Fast Switching Speed
  • Improved dv/dt Capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQS4900TF

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

3000

N

Complementary

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

±60

N: 550.0, P: 15500.00

±20

±1.95

N: 1.3, P: -0.3

2

-

N: 650.0, P: 16000.0

-

N:1.6, P:3.6

NA

N: .82, P: 2.1

-

-

-

Price N/A

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