P-Channel 1.5 V PowerTrench® Thin WL-CSP MOSFET -20V, -3A, 85mΩ

Obsolete

Overview

Designed on an advanced 1.5 V PowerTrench process with state of the art "low pitch" Thin WLCSP packaging process, the FDZ391P minimizes both PCB space and RDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low RDS(on).

  • This product is general usage and suitable for many different applications.
  • Battery Management
  • Load Switch
  • Battery Protection

  • Max RDS(on) = 85 mΩ at VGS = -4.5 V, ID = -1 A
  • Max RDS(on) = 123 mΩ at VGS = -2.5 V, ID = -1 A
  • Max RDS(on) = 200 mΩ at VGS = -1.5 V, ID = -1 A
  • Occupies only 1.5 mm2 of PCB area
  • Ultra-thin package: less than 0.4 mm height when mountedto PCB
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDZ391P

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Obsolete

CAD Model

Pb

A

H

P

WLCSP-4

1

260

REEL

5000

N

P-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Single

0

-20

-

8

-1.5

-3

1.9

NA

123

17

9

NA

-

-

-

-

Price N/A

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