N-Channel PowerTrench® MOSFET 20V, 0.9A, 220mΩ

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Overview

This 20V N-Channel MOSFET uses a high voltage PowerTrench process. It has been optimized for power management applications.

  • This product is general usage and suitable for many different applications.
  • Load Switch
  • Battery Protection
  • Power Management

  • 0.9 A, 20 V
  • RDS(ON) = 220 mΩ @ VGS = 4.5 V
  • RDS(ON) = 300 mΩ @ VGS = 2.5 V
  • Low gate charge
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDV305N

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CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

20

-

12

1.5

0.9

0.35

300

220

-

1.1

109

-

-

-

-

$0.0788

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