Small Signal MOSFETs | FDV304P

P-Channel Digital FET -25V, -0.46A, 1.1Ω

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Overview

This P-Channel enhancement mode field effect transistors is produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

  • This product is general usage and suitable for many different applications.

  • -25 V, -0.46 A continuous, -1.5 A Peak.
     RDS(ON) = 1.1 Ω @ VGS = -4.5 V,
     RDS(ON) = 1.5 Ω @ VGS = -2.7 V
  • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
  • Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
  • Compact industry standard SOT-23 surface mount package.

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDV304P

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CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

-25

-

-8

-1.5

-0.46

0.35

1500

1100

-

1.1

63

-

-

-

-

$0.0771

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FDV304P-F169

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23-3/5

Small Signal

Logic

0

Single

0

-25

1.1

-8

-1.5

-0.46

0.35

1500

1100

1.1

1.1

63

0.25

-

34

10

Price N/A

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Reliability Data

Die Related Summary Data

Device: FDV304P-F169

Equivalent to wafer fab process: TP

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TP

8

738717284

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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