Digital FET, P-Channel -25V, -0.12A, 10Ω

Obsolete

Overview

This P-Channel logic level enhancement mode field effect transistor is produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series.

  • This product is general usage and suitable for many different applications.

  • -25 V, -0.12 A continuous, -0.5 A Peak
    RDS(ON) = 13 Ω @ VGS = -2.7 V, RDS(ON) = 10 Ω @ VGS = -4.5 V
  • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
  • Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
  • Compact industry standard SOT-23 surface mount package.
  • Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET.

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDV302P

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Obsolete

CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23-3/5

Small Signal

Logic

0

Single

0

-25

-

-8

-1.5

-0.12

0.35

NA

13000

0.22

0.22

NA

-

-

-

-

Price N/A

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