Small Signal MOSFETs | FDT86246L

N-Channel PowerTrench® MOSFET 150V, 2A, 228mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.

  • Load Switch
  • Primary Switch
  • Buck/Boost Switch

  • Max rDS(on) = 228 mΩ at VGS = 10 V, ID = 2 A
  • Max rDS(on) = 280 mΩ at VGS = 4.5 V, ID = 1.8 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely usedsurface mount package
  • Fast switching speed
  • 100% UIL Tested
  • RoHS Compliant

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Package Name

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Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

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Reference Price

FDT86246L

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CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

Y

N-Channel

PowerTrench® T1

SC-4

Small Signal

Logic

0

Single

0

150

228

±20

4

2

2.2

-

280

-

2.3

238

1

31

20

2

$0.3102

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Reliability Data

Die Related Summary Data

Device: FDT86246L

Equivalent to wafer fab process: T7

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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