P-Channel PowerTrench® MOSFET,30V, -3.4A, 130mΩ

Overview

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

  • This product is general usage and suitable for many different applications.
  • Battery Charging Circuit
  • Motor Drives

  • -3.4 A, -30 V
  • RDS(ON) = 130 mΩ @ VGS = 10 V
  • RDS(ON) = 200 mΩ @ VGS = 4.5 V
  • Fast switching speed
  • Low gate charge (2.5nC typical)
  • High performance trench technology for extremelylow RDS(on)
  • High power and current handling capability in awidely used surface mount package

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDT458P

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

1

260

REEL

4000

Y

P-Channel

PowerTrench® T1

SC-4

Small Signal

Logic

0

Single

0

-30

130

20

-3

-3.4

3

-

200

-

2.5

205

-

-

-

-

$0.2717

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