Dual P-Channel PowerTrench® MOSFET -60V, -2.9A, 105mΩ

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Overview

These P-channel logic level specified MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.

  • This product is general usage and suitable for many different applications.
  • Load Switch
  • Power Management

  • Max rDS(on) = 105 mΩ at VGS = -10 V, ID = -2.9 A
  • Max rDS(on) = 135 mΩ at VGS = -4.5 V, ID = -2.5 A
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS9958

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

-60

Q1=Q2=105

±20

-3

-2.9

2

-

Q1=Q2=135

-

8

765

3

21

90

40

$0.4048

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