P-Channel 2.5V Specified MOSFET -20V, -3.5A, 130mΩ

Overview

This P-Channel 2.5V specified MOSFET is produced using a proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Power Management
  • Load Switch
  • Battery Protection

  • -3.5 A, -20 V
    RDS(ON) = 0.130Ω@ VGS = -4.5 V
    RDS(ON) = 0.180Ω@ VGS = -2.5 V
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS9431A

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

-20

-

8

-1

-3.5

2.5

180

130

6.2

6

405

1.3

-

170

45

$0.2667

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