P-Channel PowerTrench® MOSFET, 30V, -3.4A, 130mΩ

Obsolete

Overview

This P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

  • This product is general usage and suitable for many different applications.
  • Power Management
  • Load Switch
  • Battery Protection

  • -3.4 A, -30 V
  • RDS(on) = 130 mΩ@ VGS = -10 V
  • RDS(on) = 200 mΩ @ VGS = -4.5 V
  • Low gate charge (2.4nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS9400A

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

-30

130

25

-3

-3.4

2.5

NA

-

-

2.4

NA

-

-

-

-

Price N/A

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