Dual N & P-Channel PowerTrench® MOSFET 30V

Last Shipments

Overview

These dual N- and P-Channel enhancement mode power field effect transistors are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  • This product is general usage and suitable for many different applications.

  • Q1: N-Channel
    7.0 A, 30 V
    RDS(ON) = 28 mΩ @ VGS = 10 V
    RDS(ON) = 40 mΩ @ VGS = 4.5 V
  • Q2: P-Channel
    -5 A,-30 V
    RDS(ON) = 52 mΩ @ VGS = -10 V
    RDS(ON) = 80 mΩ @ VGS = -4.5 V
  • Fast switching speed
  • High power and handling capability in a widely usedsurface mount package

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS8958A

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

Complementary

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

±30

N: 28.0 , P: 52.0

±20

± 3.0

N: 7.0, P: 5.0

2

-

N: 40.0 , N: 80.0

-

N: 11.5, P:9.6

N: 575, Q2:528

N: 2.1, P: 1.7

N: 9, P: 6

N: 145, P: 132

N: 65, P: 132

Price N/A

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