Dual N & P-Channel PowerTrench® MOSFET 30V

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Overview

These dual N and P-Channel enhancement mode power MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  • This product is general usage and suitable for many different applications.
  • Inverter
  • Synchronous Buck

  • Q1 N-Channel
    Max. RDS(on) = 17 mΩ at VGS = 10 V, ID = 8.6 A
    Max. RDS(on) = 20 mΩ at VGS = 4.5 V, ID = 7.3 A
  • Q2 P-Channel
    Max. RDS(on) = 20.5 mΩ at VGS = -10 V, ID = -7.3 A
    Max. RDS(on) = 34.5 mΩ at VGS = -4.5 V, ID = -5.6 A
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package
  • Fast Switching Speed

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS8858CZ

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CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

Complementary

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

±30

N: 1.0, P:20.5

25

±3

N: 8.6, P: -7.3

2

-

N: 20.0, P:34.5

15

33

1675

-

-

-

-

$0.3709

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