N-Channel PowerTrench® MOSFET 60V, 18A, 4.5mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and bodydiode reverse recovery performance.

  • Consumer Appliances
  • Primary Switch in Insolated DC-DC
  • Synchronous Rectifier
  • Load Switch

  • Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A
  • Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A
  • High performance trench technologh for extremely low rDS(on)
  • High power and current handing capability in a widely used surface mount package
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS86540

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

N-Channel

PowerTrench® T6

SOIC-8

Small Signal

Standard

0

Single

0

60

4.5

±20

4

18

5

-

-

-

53

4820

13

44

1610

67

$1.3659

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