N-Channel PowerTrench® SyncFET™, 30V, 21A, 3.6mΩ

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Overview

The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6699S includes an integrated Schottky diode using a monolithic SyncFET technology.

  • This product is general usage and suitable for many different applications.
  • Synchronous Rectifier for DC/DC Converters
  • Notebook Vcore low side switch
  • Point of Load Low Side Switch
  • 21A, 30V
  • RDS(ON) = 3.6 mΩ @ VGS = 10V
  • RDS(ON) = 4.5 mΩ @ VGS = 4.5V
  • Includes SyncFET Schottky body diode
  • High performance trench technology for extremely low RDS(ON) and fast switching
  • High power and current handling capability
  • 100% RG (Gate Resistance) tested

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS6699S

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

30

3.6

20

3

21

2.5

-

4.5

23

35

3610

-

-

-

-

Price N/A

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