60V N-Channel PowerTrench® MOSFET 7A, 28mΩ

Obsolete

Overview

This N-Channel MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Motor Drives

  • 7 A, 60 V
    RDS(on) = 0.028 Ω @ VGS = 10 V
    RDS(on) = 0.033 Ω @ VGS = 6 V
  • Low gate charge (23nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS5690

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Single

0

80

28

±20

4

7

2.5

-

-

10

23

1107

6.8

-

149

72

Price N/A

More Details

FDS5690-NBBM009A

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Single

0

80

28

±20

4

7

2.5

-

-

10

23

1107

6.8

-

149

72

Price N/A

More Details

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