80V N-Channel PowerTrench® MOSFET 6.5A, 39mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

  • This product is general usage and suitable for many different applications.

  • 6.5 A, 80 V
  • RDS(on) = 39 mΩ @ VGS = 10 V
  • RDS(on) = 44 mΩ @ VGS = 6 V
  • Low gate charge
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS3590

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Single

0

80

39

±20

4

6.5

2.5

-

-

-

25

1180

5.8

-

171

50

$0.3553

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