N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 2.6 A, 116 mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.

  • Primary DC-DC Switch
  • Load Switch
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A
  • Max rDS(on) = 170 mΩ at VGS = 4.5 V, ID = 2.1 A
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package
  • Fast Switching Speed
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDN86501LZ

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Active

CAD Model

Pb

A

H

P

SOT-23-3

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

60

116

±20

2.4

2.6

1.5

-

173

-

1.9

236

0.6

19

77

4.9

$0.7705

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