Single P-Channel PowerTrench® MOSFET -30V, -1.3A, 180mΩ

Overview

This P-Channel Logic Level MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.

  • This product is general usage and suitable for many different applications.
  • Notebook computer power management

  • -1.3A, -30V
  • RDS(ON) = 180 mΩ @ VGS = -10V
  • -1.1A, -30V
  • RDS(ON) = 300 mΩ @ VGS = -4.5V
  • High performance trench technology for extremely low RDS(ON).
  • High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDN352AP

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Active

CAD Model

Pb

A

H

P

SOT-23-3

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

-30

180

25

-2.5

-1.3

0.5

-

300

-

1.4

150

-

-

-

-

$0.1323

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