N-Channel 2.5V Specified PowerTrench® MOSFET20V, 3A, 35mΩ

Overview

This N-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

  • This product is general usage and suitable for many different applications.
  • DC/DC converter
  • Load Switch

  • 3 A, 20 V
  • RDS(ON) = 0.035 Ω @ VGS = 4.5 V
  • RDS(ON) = 0.050 Ω @ VGS = 2.5 V.
  • Low gate charge (7nC typical).
  • High performance trench technology for extremely low RDS(ON) .
  • High power and current handling capability.

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDN339AN

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Active

CAD Model

Pb

A

H

P

SOT-23-3

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

20

-

8

1.5

3

0.5

50

35

6.3

7

700

-

-

-

-

$0.1435

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