Dual N-Channel PowerTrench® MOSFET 60V, 66A, 4.7mΩ

Last Shipments

Overview

This package integrates to N-channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.

  • This product is general usage and suitable for many different applications.

  • Common source configuration to Eliminate PCB Routing
  • Large Source Pad on Bottom of Package for Enhanced Thermals
  • Max rDS(on) = 4.7 mΩ at VGS = = 10 V, ID = 16 A
  • Max rDS(on) = 6.4 mΩ at VGS = = 8 V, ID = 14 A
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification
  • 100% UIL Tested
  • Termination is Lead-free and RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMD8680

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Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

N-Channel

PowerTrench® T6

PQFN-8

Small Signal

Standard

0

Dual

0

80

Q1=Q2=4.7

±20

4

66

39

-

-

-

53

3805

10

39

657

26

Price N/A

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