Dual N-Channel PowerTrench® MOSFET 30V, 201A, 1.25mΩ

Obsolete

Overview

This device includes two 30V N-Channel MOSFETs in a dual power (5 mm X 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

  • This product is general usage and suitable for many different applications.

  • Q1: N-Channel
    Max rDS(on) = 1.25 mΩ at VGS = 10 V, ID = 35 A
    Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 32 A
  • Q2: N-Channel
    Max rDS(on) = 1.25 mΩ at VGS = 10 V, ID = 35 A
    Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 32 A
  • Ideal for Flexible Layout in Primary Side of Bridge Topology
  • 100% UIL Tested
  • Kelvin High Side MOSFET Drive Pin-out Capability
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMD8530

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

PQFN-8

Small Signal

Logic

0

Dual

0

30

Q1=Q2=1.25

20

3

Q1=Q2= 201

78

-

Q1=Q2=1.5

-

50

7425

-

-

-

-

Price N/A

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