Dual N-Channel PowerTrench® MOSFET 100V 48A, 9.9mΩ

Last Shipments

Overview

This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

  • This product is general usage and suitable for many different applications.
  • Q1: N-Channel
    Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A
    Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A
  • Q2: N-Channel
    Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A
    Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A
  • Ideal for flexible layout in primary side of bridge topology
  • Termination is Lead-free and RoHS Compliant
  • 100% UIL tested
  • Kelvin High Side MOSFET drive pin-out capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMD85100

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Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

No

N-Channel

PowerTrench® T1

PQFN-8

Small Signal

Standard

0

Dual

0

100

Q1=Q2=9.9

±20

4

Q1=Q2: 48.0

50

-

-

9.2

13.5

Q1=1590, Q2:1485

Q1: 4.3 Q2: 4.4

Q1: 53 Q2: 51

Q1: 334 Q2: 337

Q1: 13 Q2: 13

Price N/A

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