Single P-Channel PowerTrench® MOSFET -12V, -12A, 12.5mΩ

Last Shipments

Overview

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A
  • Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A
  • Max rDS(on) = 28 mΩ at VGS = -1.8 V, ID = -8 A
  • Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm
  • HBM ESD protection level > 2.8 kV typical (Note 3)
  • Free from halogenated compounds and antimony oxides
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA908PZ

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Last Shipments

CAD Model

Pb

A

H

P

DFN-6

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

DFN-6

Small Signal

Logic

0

Single

0

-12

-

8

-1

-12

2.4

18

12.5

8.6

24

2638

-

-

-

-

Price N/A

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