Dual P-Channel PowerTrench® MOSFET -20V, -3.6A, 60mΩ

Last Shipments

Overview

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 Thin package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A
  • Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A
  • Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A
  • Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A
  • Low Profile-0.55 mm maximum - in the new package MicroFET 2x2 mm Thin
  • HBM ESD protection level > 2.4 kV typical (Note 3)
  • RoHS Compliant
  • Free from halogenated compounds and antimony oxides

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA6023PZT

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Last Shipments

CAD Model

Pb

A

H

P

UDFN-6

1

260

REEL

3000

No

P-Channel

PowerTrench® T1

Power 33

Small Signal

Logic

0

Dual

0

-20

-

8

-1.5

-3.6

1.4

Q1=Q2=80

Q1=Q2=60

17.5

12

665

-

-

-

-

Price N/A

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