Power MOSFET, N-Channel, UniFETTM, 75 V, 210 A, 5.5 mΩ, TO-247

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Overview

UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

  • RDS(on) = 4.65 mΩ (Typ.) @ VGS = 10 V, ID = 125 A
  • Low Gate Charge (Typ. 232 nC)
  • Low Crss (Typ. 262 pF)
  • 100% Avalanche Tested
  • Improved dv/dt Capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDH210N08

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Active

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

N

N-Channel

PowerTrench® T1

TO-247

Small Signal

Standard

0

Single

0

75

5.5

4

4

210

462

-

-

-

232

8743

77

420

2134

262

$3.1191

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