Dual N-Channel PowerTrench® MOSFET 30V, 0.75A, 0.4Ω

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Overview

This dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

  • This product is general usage and suitable for many different applications.
  • Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
  • Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
  • Very low level gate drive requirements allowing operationin 3V circuits(VGS(th) <1.5V)
  • Very small package outline SC70-6
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDG8850NZ

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual

0

30

Q1=Q2=400

12

1.5

0.75

0.36

Q1=Q2=500

Q1=Q2=400

-

1.03

90

-

-

-

-

$0.1653

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