P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -0.6 A, 420 mΩ

Last Shipments

Overview

This P-Channel 2.5V specified MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

  • This product is general usage and suitable for many different applications.

  • –0.6 A, –20 V.
  • RDS(ON)= 420 mΩ @ VGS = –4.5 V
  • RDS(ON) = 630 mΩ @ VGS = –2.5 V
  • Low gate charge
  • High performance trench technology for extremelylow RDS(ON)
  • Compact industry standard SC70-6 surface mountpackage

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDG6306P

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Last Shipments

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-88-6

Small Signal

Logic

0

Dual

0

-20

-

12

-1.5

-0.6

0.3

Q1=Q2=630

Q1=Q2=420

1.7

1.4

114

-

-

-

-

Price N/A

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