Small Signal MOSFETs | FDG6301N_F085

Dual N-Channel Digital FET 25 V, 0.22 A, 4 Ω

Obsolete

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Overview

These dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

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  • 25 V, 0.22 A continuous, 0.65 A peak.
  • RDS(ON) = 4 Ω VGS= 4.5 V,
  • RDS(ON) = 5 ΩVGS= 2.7 V.
  • Very low level gate drive requirements allowing directoperation in 3 V circuits (VGS(th) < 1.5 V).
  • Gate-Source Zener for ESD ruggedness(>6kV Human Body Model).
  • Compact industry standard SC70-6 surface mountpackage.
  • Qualified to AEC Q101
  • RoHS Compliant

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDG6301N-F085

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419AD

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-88-6

Small Signal

Logic

0

Dual

0

25

-

8

1.5

0.22

0.3

Q1=Q2=5000

Q1=Q2=4000

1.1

0.29

9.5

-

-

-

-

Price N/A

More Details

FDG6301N-F085P

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419AD

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-88-6

Small Signal

Logic

0

Dual

0

25

-

8

1.5

0.22

0.3

Q1=Q2=5000

Q1=Q2=4000

1.1

0.29

9.5

-

-

-

-

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: FDG6301N-F085

Equivalent to wafer fab process: TP

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TP

8

738717284

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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