P-Channel PowerTrench® MOSFET -20V, -2.6A, 97mΩ

Obsolete

Overview

This P-Channel MOSFET usesan advanced low voltage PowerTrench® process. It has been optimized for battery power management applications.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 95mΩ at VGS = -4.5V, ID = -2.6A
  • Max rDS(on) = 115mΩ at VGS = -2.5V, ID = -2.2A
  • Max rDS(on) = 160mΩ at VGS = -1.8V, ID = -1.9A
  • Max rDS(on) = 330mΩat VGS = -1.5V, ID = -1.0A
  • Very low level gate drive requirements allowing operationin 1.5V circuits
  • Very small package outline SC70-6
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDG332PZ

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Obsolete

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-88-6

Small Signal

Logic

0

Single

0

-20

-

8

-1.5

-2.6

0.75

NA

115

1.8

7.6

NA

-

-

-

-

Price N/A

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