Name: P-Channel 1.8V Specified PowerTrench ® MOSFET -12 V, -2 A, 110 mΩ
Brand: P-Channel 1.8V Specified PowerTrench ® MOSFET -12 V, -2 A, 110 mΩ
SKU: FDG330P

P-Channel 1.8V Specified PowerTrench^® MOSFET -12 V, -2 A, 110 mΩ

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Overview

This P-Channel 1.8V specified MOSFET uses ON Semiconductor’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

This product is general usage and suitable for many different applications.

-2A, -12V
R_DS(ON) = 110mΩ @ V_GS = -4.5V
R_DS(ON) = 150mΩ @ V_GS = -2.5V
R_DS(ON) = 215mΩ @ V_GS = -1.8V
Low gate charge
High performance trench technology for extremely low R_DS(ON)
Compact industry standard SC70-6 surface mount package

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V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

V_GS Max (V)

V_gs(th) Max (V)

I_d Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

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Q_gd Typ @ V_GS = 4.5 V (nC)

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FDG330P

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Small Signal MOSFETs | FDG330P

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