N-Channel Logic Level PowerTrench® MOSFET 30 V, 2 A, 120 mΩ

Last Shipments

Overview

This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  • This product is general usage and suitable for many different applications.

  • 2 A, 30 A V
  • RDS(on) = 0.12 Ω @ VGS = 10 V
  • RDS(on) = 0.16 Ω @ VGS = 4.5 V
  • Low gate charge (2.1nC typical).
  • High performance trench technology for extremely lowRDS(ON) .
  • Compact industry standard SC70-6 surface mountpackage.

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDG315N

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Last Shipments

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-88-6

Small Signal

Logic

0

Single

0

30

120

20

3

2

0.75

NA

-

4.5

2.1

NA

-

-

-

-

Price N/A

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