Small Signal MOSFETs | FDFS6N754

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V , 4A, 56mΩ

Obsolete

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Overview

The FDFS6N754 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 56mΩ at VGS = 0V, ID= 4A
  • Max rDS(on) = 75mΩ at VGS= 4.5V, ID = 3.5A
  • VF 0.45V @ 2A
  • VF 0.28V @ 100mA
  • Schottky and MOSFET incorporated into single powersurface mount SO-8 package
  • Electrically independent Schottky and MOSFET pinoutfor design flexibility
  • Low Gate Charge (Qg = 4nC)
  • Low Miller Charge

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDFS6N754

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

with Schottky Diode

0

30

56

20

2.5

4

2

NA

-

3.3

2

NA

-

-

-

-

Price N/A

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