N-Channel PowerTrench® MOSFET 30V, 94A, 4.7mΩ

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Overview

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

  • This product is general usage and suitable for many different applications.

  • RDS(ON) = 5.7 mΩ, VGS = 10V, ID = 35V
  • RDS(ON) = 6.8 mΩ, VGS = 4.5V, ID = 35V
  • High performance trench technology for extremely low RDS(ON)
  • Low gate charge
  • High power and current handling capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD8896

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

DPAK

Small Signal

Logic

0

Single

0

30

5.7

20

2.5

94

80

-

6.8

-

24

2525

-

-

-

-

$0.4005

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