N-Channel, PowerTrench® MOSFET, Logic Level, 30V, 6.1A, 27mΩ

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Overview

This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing an advanced PowerTrench® process, this device possesses minimized on-state resistance to optimize the power consumption. They are ideal for applications where in-line power loss is critical.

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 27mΩ at VGS = 10V, ID = 6.1A
  • Max rDS(on) = 36mΩ at VGS = 4.5V, ID = 5.3A
  • SuperSOT™ -6 package: small footprint (72% smaller thanstandard SO-8; low profile (1mm thick).
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC855N

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CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Single

0

30

27

20

3

6.1

1.6

-

36

-

4.9

493

-

-

-

-

$0.2189

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