P-Channel PowerTrench® MOSFET, Logic Level, -30V, -3.6A, 75mΩ

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Overview

This P-Channel Logic Level MOSFET is produced using an advanced PowerTrench® process. It has been optimized for battery power management applications.

  • This product is general usage and suitable for many different applications.

  • -3.6 A, -30 V
  • RDS(ON) = 75 mΩ @ VGS = -10 V
  • RDS(ON) = 125 mΩ @ VGS = -4.5 V
  • Low gate charge (6.2nC typical)
  • High performance trench technology for extremely low RDS(ON)

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC654P

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CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Single

0

-30

75

20

-3

-3.5

1.6

-

125

6

6.2

298

-

-

-

-

$0.1548

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