Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3.0A, 70mΩ

Overview

This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

  • This product is general usage and suitable for many different applications.

  • 3.0 A, 20 V
  • RDS(ON) = 70 mΩ @ VGS = 4.5 V
  • RDS(ON) = 95 mΩ @ VGS = 2.5 V
  • Low gate charge
  • High performance trench technology for extremelylow RDS(on)
  • High power and current handling capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC6401N

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual

0

20

-

12

1.5

3

0.96

Q1=Q2=95

Q1=Q2=70

-

3.3

324

-

-

-

-

$0.2272

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