Small Signal MOSFETs | FDC6327C

Dual N & P-Channel PowerTrench® MOSFET, 2.5V Specified

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Overview

These N & P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

  • This product is general usage and suitable for many different applications.

  • N-Channel
     2.7A, 20V
     RDS(on) = 0.08Ω @ VGS = 4.5V
     RDS(on) = 0.12Ω @ VGS = 2.5V
  • P-Channel
     -1.6A, -20V
     RDS(on) = 0.17Ω @ VGS = -4.5V
     RDS(on) = 0.25Ω @ VGS = -2.5V
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremelylow RDS(ON) .
  • SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC6327C

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

Complementary

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual

0

±20

-

8

±1.5

N:2.7 , P: -1.6

0.96

N:120, P:250

N: 80, P: 170

3.7

2.85

315

N: 0.9, P: 0.65

-

-

-

$0.1629

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FDC6327C-F169

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Obsolete

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

Complementary

PowerTrench® T1

NA

Small Signal

Logic

0

Dual

0

20

250

-

8

-1.9

0.96

N:120 P:250

N: 80, P: 170

2.85

2.85

325

0.9

-

N: 75, P: 65

N: 35, P: 24

Price N/A

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Reliability Data

Die Related Summary Data

Device: FDC6327C

Equivalent to wafer fab process: TR

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TR

1

1603286882

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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