Small Signal MOSFETs | FDC30N20DZ

Dual N-Channel PowerTrench® MOSFET, 30V, 4.6A, 31mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process. This process has been optimized for rDS(on), switching performance and ruggedness.

  • Max rDS(on) = 31 mΩ at VGS = 10 V, ID = 4.6 A
  • Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 4.2 A
  • High Performance Trench® Technology for Extremely Low rDS(on)
  • Fast Switching Speed
  • 100% UIL Tested
  • Typical CDM ESD protection level > 2.0 kV ( Note 5)
  • RoHS Compliant

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Package Name

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Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

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Reference Price

FDC30N20DZ

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Last Shipments

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

TSOT-23-6

Small Signal

Logic

0

Single

0

30

31

20

3

4.6

0.96

-

38

14

2.7

356

-

-

-

-

Price N/A

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Reliability Data

Die Related Summary Data

Device: FDC30N20DZ

Equivalent to wafer fab process: RN

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

RN

9

5181260142

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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